Zhang Jie, Yu Shenglin, Ma Meiming, Wang Yuzhuang. Design and thermal analysis of high power GaN chip package[J]. WELDING & JOINING, 2021, (8): 24-28. DOI: 10.12073/j.hj.20210616001
Citation: Zhang Jie, Yu Shenglin, Ma Meiming, Wang Yuzhuang. Design and thermal analysis of high power GaN chip package[J]. WELDING & JOINING, 2021, (8): 24-28. DOI: 10.12073/j.hj.20210616001

Design and thermal analysis of high power GaN chip package

  • Silicon aluminum alloy was taken as packaging material in the paper, a packaging model for high-power GaN chip was designed by using AlN, Al2O3 and PTFE as the chip substrate. The thermal stress distribution of GaN chip in the model was simulated by ANSYS software at the cycling temperature of-55 ~ 125 ℃ . The research results showed that chip with PTFE substrate for packaging model sustained the maximum stress, Al2O3 took second place and AlN possessed the minimum stress. The results provided a reference for the design of high power chip package in new aerospace devices.
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